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 MJD47, MJD50 High Voltage Power Transistors
DPAK For Surface Mount Applications
D e s i g n e d f o r l i n e o p e r a t e d a u d i o o u t p u t a m p l i f i e r, SWITCHMODEt power supply drivers and other switching applications.
Features http://onsemi.com
* Lead Formed for Surface Mount Applications in Plastic Sleeves * * * * * *
(No Suffix) Electrically Similar to Popular TIP47, and TIP50 250 and 400 V (Min) - VCEO(sus) 1 A Rated Collector Current Epoxy Meets UL 94 V-0 @ 0.125 in ESD Ratings: Human Body Model, 3B u 8000 V Machine Model, C u 400 V Pb-Free Packages are Available
NPN SILICON POWER TRANSISTORS 1 AMPERE 250, 400 VOLTS, 15 WATTS
4 12
3
MAXIMUM RATINGS
Rating Collector-Emitter Voltage MJD47 MJD50 MJD47 MJD50 Symbol VCEO Max 250 400 350 500 5 1 2 0.6 15 0.12 1.56 0.0125 -65 to +150 Unit Vdc
DPAK CASE 369C STYLE 1
MARKING DIAGRAM
YWW JxxG
Collector-Base Voltage
VCB
Vdc
Emitter-Base Voltage Collector Current Base Current Total Power Dissipation @ TC = 25C Derate above 25C Total Power Dissipation (Note 1) @ TA = 25C Derate above 25C Operating and Storage Junction Temperature Range - Continuous - Peak
VEB IC IB PD
Vdc Adc mAdc W W/C W W/C C Y WW Jxx G = Year = Work Week = Device Code xx = 47 or 50 = Pb-Free Package
PD
ORDERING INFORMATION
See detailed ordering and shipping information in the package dimensions section on page 4 of this data sheet.
TJ, Tstg
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance Junction-to-Case Thermal Resistance Junction-to-Ambient (Note 1) Lead Temperature for Soldering Purpose Symbol RqJC RqJA TL Max 8.33 80 260 Unit C/W C/W C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. These ratings are applicable when surface mounted on the minimum pad sizes recommended.
(c) Semiconductor Components Industries, LLC, 2010
July, 2010 - Rev. 9
1
Publication Order Number: MJD47/D
PD, POWER DISSIPATION (WATTS)
III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I III I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II III I I I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I IIIIIII III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I IIII I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I III I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I III I I I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I IIIIIII III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I III I I I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII
2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%. DYNAMIC CHARACTERISTICS ON CHARACTERISTICS (Note 2) OFF CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Small-Signal Current Gain (IC = 0.2 Adc, VCE = 10 Vdc, f = 1 kHz)
Current Gain -- Bandwidth Product (IC = 0.2 Adc, VCE = 10 Vdc, f = 2 MHz)
Base-Emitter On Voltage (IC = 1 Adc, VCE = 10 Vdc)
Collector-Emitter Saturation Voltage (IC = 1 Adc, IB = 0.2 Adc)
DC Current Gain (IC = 0.3 Adc, VCE = 10 Vdc) (IC = 1 Adc, VCE = 10 Vdc)
Emitter Cutoff Current (VBE = 5 Vdc, IC = 0)
Collector Cutoff Current (VCE = 350 Vdc, VBE = 0) (VCE = 500 Vdc, VBE = 0)
Collector Cutoff Current (VCE = 150 Vdc, IB = 0) (VCE = 300 Vdc, IB = 0)
Collector-Emitter Sustaining Voltage (Note 2)
0.5
1.5 15
TA TC 2.5 25
(IC = 30 mAdc, IB = 0)
0
1 10
2 20
0
5
25
TC
50
Figure 1. Power Derating
TA (SURFACE MOUNT)
T, TEMPERATURE (C)
75
Characteristic
100
TYPICAL CHARACTERISTICS
125
http://onsemi.com
MJD47, MJD50
150
2 Vin 0 VEB(off) APPROX +11 V TURN-ON PULSE APPROX +11 V Vin
Figure 2. Switching Time Equivalent Circuit
TURN-OFF PULSE MJD47 MJD50 MJD47 MJD50 MJD47 MJD50 t2 t1 t3 VCEO(sus) Symbol VCE(sat) VBE(on) VCC ICEO IEBO ICES hFE Vin hfe fT 51 t1 7 ns 10 < t2 < 500 ms t3 < 15 ns DUTY CYCLE 2% APPROX - 9 V Cjd << Ceb Min 250 400 RB 25 10 30 10 RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS.
-
-
-
-
-
-
-
RC
-4 V Max 150 - 1.5 0.1 0.1 0.2 0.2
-
-
-
1
1
-
mAdc
mAdc
mAdc
MHz
SCOPE Unit Vdc Vdc Vdc - -
MJD47, MJD50
200 VCE = 10 V 100 h FE , DC CURRENT GAIN 60 40 20 10 6 4 2 0.02 V, VOLTAGE (VOLTS) TJ = 150C 25C - 55C 1.4 1.2 1 VBE(sat) @ IC/IB = 5 0.8 0.6 0.4 0.2 0 0.02 VBE(on) @ VCE = 4 V
TJ = 25C VCE(sat) @ IC/IB = 5 0.1 0.2 0.4 0.6 0.04 0.06 IC, COLLECTOR CURRENT (AMPS) 1 2
0.2 0.4 0.6 0.04 0.06 0.1 IC, COLLECTOR CURRENT (AMPS)
1
2
Figure 3. DC Current Gain
Figure 4. "On" Voltages
1 0.7 0.5 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.01 0.01
D = 0.5 0.2 0.1 0.05 0.02 0.01 SINGLE PULSE RqJC(t) = r(t) RqJC RqJC = 8.33C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) qJC(t) P(pk)
t1 t2 DUTY CYCLE, D = t1/t2
0.02 0.03
0.05
0.1
0.2 0.3
0.5
1
23 5 t, TIME (ms)
10
20
30
50
100
200 300
500
1k
Figure 5. Thermal Response
5 IC, COLLECTOR CURRENT (AMP) 2 1 0.5 TC 25C 0.2 0.1 SECOND BREAKDOWN LIMIT THERMAL LIMIT @ 25C WIRE BOND LIMIT MJD47 CURVES APPLY BELOW MJD50 RATED VCEO 5 10 20 50 100 200 300 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 500 1 ms dc 500 ms 100 ms
0.05 0.02 0.01
0.005
There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 6 is based on TJ(pk) = 150_C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) v 150_C. TJ(pk) may be calculated from the data in Figure 5. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown.
Figure 6. Active Region Safe Operating Area
http://onsemi.com
3
MJD47, MJD50
1 0.5 tr t, TIME ( s) td TJ = 25C VCC = 200 V IC/IB = 5 5 ts 2 1 0.5 tf TJ = 25C VCC = 200 V IC/IB = 5
t, TIME ( s)
0.2 0.1 0.05
0.2 0.1 0.05 0.02
0.02 0.01 0.02
0.05
0.1 0.2 0.5 IC, COLLECTOR CURRENT (AMPS)
1
2
0.05
0.1 0.2 0.5 IC, COLLECTOR CURRENT (AMPS)
1
2
Figure 7. Turn-On Time
Figure 8. Turn-Off Time
ORDERING INFORMATION
Device MJD47 MJD47G MJD47T4 MJD47T4G MJD50 MJD50G MJD50T4 MJD50T4G Package 369C 369C (Pb-Free) 369C 369C (Pb-Free) 369C 369C (Pb-Free) 369C 369C (Pb-Free) 2500 / Tape & Reel 75 Units / Rail 2500 / Tape & Reel 75 Units / Rail Shipping
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
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4
MJD47, MJD50
PACKAGE DIMENSIONS
DPAK CASE 369C-01 ISSUE D
C A B c2
NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCHES. 3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.006 INCHES PER SIDE. 5. DIMENSIONS D AND E ARE DETERMINED AT THE OUTERMOST EXTREMES OF THE PLASTIC BODY. 6. DATUMS A AND B ARE DETERMINED AT DATUM PLANE H. DIM A A1 b b2 b3 c c2 D E e H L L1 L2 L3 L4 Z INCHES MIN MAX 0.086 0.094 0.000 0.005 0.025 0.035 0.030 0.045 0.180 0.215 0.018 0.024 0.018 0.024 0.235 0.245 0.250 0.265 0.090 BSC 0.370 0.410 0.055 0.070 0.108 REF 0.020 BSC 0.035 0.050 --- 0.040 0.155 --- MILLIMETERS MIN MAX 2.18 2.38 0.00 0.13 0.63 0.89 0.76 1.14 4.57 5.46 0.46 0.61 0.46 0.61 5.97 6.22 6.35 6.73 2.29 BSC 9.40 10.41 1.40 1.78 2.74 REF 0.51 BSC 0.89 1.27 --- 1.01 3.93 ---
E b3 L3
1 4
A
D
2 3
Z
DETAIL A
H
L4
b2 e
b 0.005 (0.13)
M
c C L2
GAUGE PLANE
H C L L1 DETAIL A
SEATING PLANE
A1
ROTATED 90 CW 5
SOLDERING FOOTPRINT*
6.20 0.244 3.0 0.118
STYLE 1: PIN 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR
2.58 0.101
5.80 0.228
1.6 0.063
6.172 0.243
SCALE 3:1
mm inches
*For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
SWITCHMODE is a trademark of Semiconductor Components Industries, LLC (SCILLC).
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81-3-5773-3850 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative
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5
MJD47/D


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